dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 1 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information 60v 175c n - channel enhancement mode mosfet product summary b v dss r ds(on) m ax i d m ax t c = + 25c 6 0v 10m ? @ v gs = 10 v 5 9 a 1 2.8 m ? @ v gs = 4 .5v 52 a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? power m anagement f unctions ? dc - dc converters ? backlighting features ? rated to + 175 c C ideal for high ambient temperature environments ? low r ds(on) C e nsures o n s tate l osses a re m inimized ? excellent q gd x r ds (on ) product (fom) ? a dvanced t echnology for dc/dc c onvert er s ? small f orm f actor t hermally e fficient p ackage e nables h igher d ensity e nd p roducts ? lead - free finish; rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: to 252 ? case material: molded plastic, green molding compound. ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? w eight: 0. 33 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h 60 09l k3 q - 13 to252 2 , 5 00 /tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information equivalent circuit pin out top view =manufacturer s marking h 60 09l = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 5 = 201 5 ) ww = week code (01 to 53) top view yyww h 60 09l green
dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 2 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v t a = + 25 c t a = + 70 c i d 14. 2 11.9 a continuous drain current (note 7 ) v gs = 10 v t c = + 25 c t c = + 70 c i d 5 9 49 a maximum continuous body diode f orward current (note 7 ) i s 80 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 90 a avalanche current , l=0. 1 mh i a s 20.3 a avalanche energy , l=0. 1 mh e a s 20.6 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) p d 3.2 w thermal resistance, junction to ambient (note 6 ) r ? ja 47 c/w total power dissipation (note 7 ) p d 60 w thermal resistance, junction to case (note 7 ) r ? j c 2.5 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 60 - - v v gs = 0v, i d = 1m a zero gate voltage drain current i dss - - 1 a v ds = 48 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 16 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs (th) 0 .7 1.4 2 v v ds = v gs , i d = 250 a st atic drain - source on - resistance r ds (on) - 8.3 10 m ? v gs = 10 v, i d = 13.5 a - 9.6 1 2 . 8 m ? v gs = 4.5 v, i d = 11.5 a diode forward voltage v sd - 0.9 1.2 v v gs = 0v, i s = 20 a dynamic characteristics (note 9 ) input capacitance c iss - 1 , 925 - pf v ds = 30 v, v gs = 0v , f = 1mhz output capacitance c oss - 438 - reverse transfer capacitance c rss - 41 - gate r esistance r g - 1.7 - ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g - 15.6 - nc v ds = 30 v, i d = 13.5 a total gate charge ( v gs = 10 v ) q g - 33.5 - gate - source charge q gs - 4.7 - gate - drain charge q gd - 5.3 - turn - on delay time t d( on ) - 4.5 - ns v dd = 30 v, v gs = 10 v, r g = 6 , i d = 13.5 a turn - on rise time t r - 8.6 - turn - off delay time t d( off ) - 35.9 - turn - off fall time t f - 15.7 - body diode reverse recovery time t rr - 18.2 - n s i f = 13.5 a , di /d t = 400a/ s body diode reverse recovery charge q rr - 33.1 - n c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . 7 . device mounted on infinite heat sink and measured by thermal couple attached on bottom hea t sink of package . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 3 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds, drain - source voltage (v) figure 1. typical output characteristic v gs =2.5v v gs =3.0v v gs =3.5v v gs =4.0v v gs =4.5v v gs =10.0v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5 v - 55 25 85 175 150 125 0 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =13.5a 0.006 0.0065 0.007 0.0075 0.008 0.0085 0.009 0.0095 0.01 2 6 10 14 18 22 26 30 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =4.5v, i d =11.5a v gs =10v, i d =13.5a 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0.011 0.012 0.013 0.014 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 10v - 55 25 85 125 175 150
dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 4 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information 0 0.004 0.008 0.012 0.016 0.02 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with junction temperature v gs =10v, i d =13.5a v gs =4.5v, i d =11.5a 0.4 0.8 1.2 1.6 2 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 10 100 1000 10000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v, t j =85 v gs =0v, t j =175 v gs =0v, t j =150 v gs =0v, t j =125 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =175 a =25 gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s 0 2 4 6 8 10 0 7 14 21 28 35 v gs (v) q g (nc) figure 11. gate charge v ds =30v, i d =13.5a
dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 5 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t)=r(t) * r jc r jc =2.5 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1
dm t h 60 09l k3 q document number: ds 38014 rev. 1 - 2 6 of 6 www.diodes.com september 2015 ? diodes incorporated dm t h 60 09l k3 q advanced information advanced information suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. th is document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com x1 x y2 y1 y c
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